Electronic transport in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum wells

Abstract

We present a comprehensive study of longitudinal transport of two-dimensional (2D) carriers in n- and p-type modulation doped GaxIn1-xNyAs1-y/GaAs quantum well structures. The Hall mobility and carrier density of electrons in the n- modulation doped quantum wells (QWs) decreases with increasing nitrogen composition. However, the mobility of the 2D holes in p-modulation doped wells is not influenced by nitrogen and it is significantly higher than that of 2D electrons in n- modulation doped material. The observed behaviour is explained in terms of increasing electron effective mass as well as enhanced N-related alloying scattering with increasing nitrogen content.