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Energy Relaxation of Electrons in InGaN Quantum Wells

dc.contributor.authorLİŞESİVDİN, Sefer Bora
dc.contributor.authorCakmak, Huseyin
dc.contributor.authorNarin, Polat
dc.contributor.authorAtmaca, Gokhan
dc.contributor.authorBalkan, Naci
dc.contributor.authorSarikavak-Lisesivdin, Beyza
dc.contributor.authorÖZBAY, Ekmel
dc.date.accessioned2021-03-04T17:51:09Z
dc.date.available2021-03-04T17:51:09Z
dc.date.issued2015
dc.identifier.citationSarikavak-Lisesivdin B., LİŞESİVDİN S. B. , Balkan N., Atmaca G., Narin P., Cakmak H., ÖZBAY E., "Energy Relaxation of Electrons in InGaN Quantum Wells", METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, ss.1565-1569, 2015
dc.identifier.issn1073-5623
dc.identifier.otherav_879731cb-5b9b-40a8-a3f2-288925ad5713
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/92094
dc.identifier.urihttps://doi.org/10.1007/s11661-015-2762-2
dc.description.abstractIn this study, electron energy relaxation mechanisms in HEMT structures with different In (x) Ga1-x N-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (-243 A degrees C) < T (e) < 700 K (427 A degrees C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. (C) The Minerals, Metals & Materials Society and ASM International 2015
dc.language.isoeng
dc.subjectMühendislik ve Teknoloji
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.subjectMalzeme Bilimi
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMETALURJİ VE METALURJİ MÜHENDİSLİĞİ
dc.subjectMetalurji ve Malzeme Mühendisliği
dc.titleEnergy Relaxation of Electrons in InGaN Quantum Wells
dc.typeMakale
dc.relation.journalMETALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
dc.contributor.departmentGazi Üniversitesi , ,
dc.identifier.issue4
dc.identifier.startpage1565
dc.identifier.endpage1569
dc.contributor.firstauthorID221697


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