Energy Relaxation of Electrons in InGaN Quantum Wells

Abstract

In this study, electron energy relaxation mechanisms in HEMT structures with different In (x) Ga1-x N-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (-243 A degrees C) < T (e) < 700 K (427 A degrees C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. (C) The Minerals, Metals & Materials Society and ASM International 2015