Effect of Mn Doping on the Properties of Sol-gel Derived Pb0.3Sr0.7TiO3 Thin Films

Abstract

Thin films of Pb0.3Sr0.7TiO3 (PST) and 2mol% Mn-doped PST (Pb0.3Sr0.7Ti0.98Mn0.02O3 or PSMT2) were fabricated on (001)-oriented LaAlO3 substrates using sol-gel and spin-coating techniques. The ferroelectric transition temperature did not change with Mn doping. However, dielectric constant and figure of merit (K) were found to increase with Mn doping in PST film. At room temperature and 20kV/cm applied field, a maximum K value of pure PST film was found to be merely 0.887, which improved to 22.36 and 29.85 at 20kV/cm and 40kV/cm, respectively for the 2% Mn doped PST film.