| dc.contributor.author | Takagi, Shigetaga | |
| dc.contributor.author | Yarman, B. Siddik | |
| dc.contributor.author | Fujii, Nobuo | |
| dc.contributor.author | Retdian, Nicodimus | |
| dc.date.accessioned | 2021-03-04T09:52:43Z | |
| dc.date.available | 2021-03-04T09:52:43Z | |
| dc.identifier.citation | Yarman B. S. , Retdian N., Takagi S., Fujii N., "Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz", International Symposium on Signals, Circuits and Systems, Iasi, Romanya, 12 - 13 Temmuz 2007, ss.65-66 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.other | av_6a61f6fa-048c-4240-be39-1f63c8b0a818 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/73624 | |
| dc.description.abstract | In this paper, gain bandwidth limitations of a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band. | |
| dc.language.iso | eng | |
| dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
| dc.subject | Sinyal İşleme | |
| dc.subject | Bilgisayar Bilimleri | |
| dc.subject | Veritabanı ve Veri Yapıları | |
| dc.subject | Mühendislik ve Teknoloji | |
| dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
| dc.subject | Mühendislik | |
| dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
| dc.subject | Bilgisayar Bilimi | |
| dc.subject | BİLGİSAYAR BİLİMİ, YAZILIM MÜHENDİSLİĞİ | |
| dc.title | Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz | |
| dc.type | Bildiri | |
| dc.contributor.department | Tokyo Institute of Technology , , | |
| dc.contributor.firstauthorID | 133426 | |
