Gain-bandwidth properties of 0.18 mu m Si-CMOS transistor up to 10 GHz

Abstract

In this paper, gain bandwidth limitations of a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed on a single chip up to X-Band.