Muonium transitions in 4H silicon carbide
Author
Carroll, B. R.
Celebi, Yaşar Gürkan
Cox, S. F. J.
King, P. J. C.
Bani-Salameh, H. N.
Meyer, A. G.
Vernon, J. E.
Lichti, R. L.
Metadata
Show full item recordAbstract
Preliminary low-field data on the diamagnetic muon spin rotation signal in 4H-SiC are presented. The initial results on all three electrical types of 4H-SiC are compared with those for the 6H polytype. Analysis of amplitude transitions at low temperatures in n- and p-type samples indicates carrier capture. At temperatures above 600 K, an increase in diamagnetic amplitude and an associated dip in the phase indicate a slowly formed state in the p-type material. We discuss possible identification of transitions evident from temperature dependent diamagnetic amplitudes and correlations with neutral muonium centers. (c) 2008 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.12627/65449https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=62949144470&origin=inward
https://doi.org/10.1016/j.physb.2008.11.155
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