Influence of Metallic Indium Concentration on the Properties of Indium Oxide Thin Films

Abstract

Current-voltage characteristics of indium-embedded indium oxide thin films (600-850 angstrom), with Ag electrodes approximately 1000 angstrom thick, prepared by reactive evaporation of pure metallic indium in partial air pressure have been studied for substrate temperatures between 50 and 125 degrees C. The optical properties of these films have also been investigated as a function of metallic indium concentration and substrate temperature. I-V characteristics of all the samples are non-ohmic, independent of metallic indium concentration. The conductivity of the films increases but the optical transmission decreases with increasing metallic indium concentration. Metallic indium concentration was found to be an important parameter affecting the film properties. Furthermore, two possible conduction mechanisms are proposed.