VDTA based Schmitt trigger using 32 nm CNTFET technology

Abstract

This paper presents voltage differencing transconductance amplifier based Schmitt trigger using 32 nm carbon nanotube field effect transistors (CNTFET). CNTFET is best candidate to replace conventional silicon based MOSFET, which has already reached its limits from the point of scaling down. The main advantage of proposed Schmitt trigger is that, it uses only one passive component and electronically controllable. The power consumption of the device is 39 mu W, twice better than the best 16 nm CMOS counterparts. Monte Carlo analysis was performed to check worst-case scenario. Signal to square wave convertor was demonstrated using proposed Schmitt trigger.