Integer quantum Hall effect measurement analysis in Ga0.68In0.32N0.017As/ GaAs quantum wells with various annealing time

Abstract

The integer quantum Hall Effect (QHE) and magnetoresistance measurements are carried out at temperature range 1.8 K and 40 K under a magnetic field up to 11 T to investigate the influence of the thermal annealing process and thermal annealing time on the transport parameters of as-grown and annealed n-type Ga0.68In0.32N0.017As0.983/GaAs quantum well (QW) structures. The electron effective mass, two-dimensional (2D) carrier density, quantum lifetime, and Fermi level are obtained by analyzing both oscillatory parts of magnetoresistance measurements (Shubnikov de Haas oscillations) and QHE oscillations. The compatibility of two different methods with each other is discussed, and the dependence of physical parameters obtained from both methods on annealing time was discussed. Our results reveal that the thermal annealing process and annealing duration time affect 2D carrier density, electron effective mass, quantum lifetime, transport lifetime, and Fermi level. The increase in annealing time showed that mu t/mu q ratios caused the shift from long-range scattering to short-range scattering in the low-temperature region.