Optical and electrical properties of modulation doped n and p type GaInNAs/GaAs quantum wells for 1.3 micron laser applications

dc.contributor.author	Fontaine, C.
dc.contributor.author	EROL, AYŞE
dc.contributor.author	Uluğ, A.
dc.contributor.author	Arnoult, A.
dc.contributor.author	Sopanen, M.
dc.contributor.author	ARIKAN, M.Ç.
dc.contributor.author	Sun, Y.
dc.contributor.author	Balkan, N.
dc.contributor.author	Uluğ, B.
dc.date.accessioned	2021-03-04T18:36:31Z
dc.date.available	2021-03-04T18:36:31Z
dc.identifier.citation	Sun Y., EROL A., Balkan N., ARIKAN M., Uluğ B., Uluğ A., Fontaine C., Arnoult A., Sopanen M., "Optical and electrical properties of modulation doped n and p type GaInNAs/GaAs quantum wells for 1.3 micron laser applications", Opt. Quant. Electronics, cilt.40, ss.467-474, 2007
dc.identifier.other	vv_1032021
dc.identifier.other	av_8b9eb1ad-d403-4dae-827a-dc91a2df0ee0
dc.identifier.uri	http://hdl.handle.net/20.500.12627/94504
dc.language.iso	eng
dc.subject	Temel Bilimler
dc.subject	Fizik
dc.subject	Temel Bilimler (SCI)
dc.title	Optical and electrical properties of modulation doped n and p type GaInNAs/GaAs quantum wells for 1.3 micron laser applications
dc.type	Makale
dc.relation.journal	Opt. Quant. Electronics
dc.contributor.department	İstanbul Üniversitesi , ,
dc.identifier.volume	40
dc.identifier.startpage	467
dc.identifier.endpage	474
dc.contributor.firstauthorID	685786

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