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Acceptor Formation In Mg-Doped, Indium-Rich Ga X In1-X N: Evidence For P-Type Conductivity

dc.contributor.authorTıraş, E.
dc.contributor.authorARIKAN, Mehmet Çetin
dc.contributor.authorEROL, Ayşe
dc.contributor.authorBalkan , Naci
dc.date.accessioned2021-03-04T12:29:01Z
dc.date.available2021-03-04T12:29:01Z
dc.identifier.citationBalkan N., Tıraş E., EROL A., ARIKAN M. Ç. , "Acceptor Formation In Mg-Doped, Indium-Rich Ga X In1-X N: Evidence For P-Type Conductivity", NANOSCALE RESEARCH LETTERS, cilt.7, ss.574-580, 2002
dc.identifier.issn1931-7573
dc.identifier.othervv_1032021
dc.identifier.otherav_7778440d-c1d4-46ed-86ce-4d0d0be3acf6
dc.identifier.urihttp://hdl.handle.net/20.500.12627/82024
dc.language.isoeng
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectTemel Bilimler
dc.titleAcceptor Formation In Mg-Doped, Indium-Rich Ga X In1-X N: Evidence For P-Type Conductivity
dc.typeMakale
dc.relation.journalNANOSCALE RESEARCH LETTERS
dc.contributor.department, ,
dc.identifier.volume7
dc.identifier.startpage574
dc.identifier.endpage580
dc.contributor.firstauthorID278393


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