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In Plane Photoconductive Properties of MBE Grown GaAs/GaAIAs Multiple Quantum Wells

dc.contributor.authorARIKAN, Mehmet Çetin
dc.contributor.authorBalkan , Naci
dc.contributor.authorErgün, Yüksel
dc.date.accessioned2021-03-04T12:20:29Z
dc.date.available2021-03-04T12:20:29Z
dc.identifier.citationARIKAN M. Ç. , Ergün Y., Balkan N., "In Plane Photoconductive Properties of MBE Grown GaAs/GaAIAs Multiple Quantum Wells", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.8, ss.1335-1340, 1993
dc.identifier.issn0268-1242
dc.identifier.othervv_1032021
dc.identifier.otherav_76c9fa5a-f794-4f12-9700-c1e4b2cdcac5
dc.identifier.urihttp://hdl.handle.net/20.500.12627/81566
dc.language.isoeng
dc.subjectTemel Bilimler
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.titleIn Plane Photoconductive Properties of MBE Grown GaAs/GaAIAs Multiple Quantum Wells
dc.typeMakale
dc.relation.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY
dc.contributor.departmentAnadolu Üniversitesi , ,
dc.identifier.volume8
dc.identifier.startpage1335
dc.identifier.endpage1340
dc.contributor.firstauthorID278374


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