| dc.contributor.author | Doty, Matthew F. | |
| dc.contributor.author | Can, Musa Mutlu | |
| dc.contributor.author | Haughn, Chelsea R. | |
| dc.contributor.author | Firat, Tezer | |
| dc.contributor.author | Shah, S. Ismat | |
| dc.date.accessioned | 2021-03-04T12:09:20Z | |
| dc.date.available | 2021-03-04T12:09:20Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | Can M. M. , Shah S. I. , Doty M. F. , Haughn C. R. , Firat T., "Electrical and optical properties of point defects in ZnO thin films", JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.45, sa.19, 2012 | |
| dc.identifier.issn | 0022-3727 | |
| dc.identifier.other | av_75f03b2b-6ad0-4b98-8020-721a1ffcce83 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/81000 | |
| dc.identifier.uri | https://doi.org/10.1088/0022-3727/45/19/195104 | |
| dc.description.abstract | We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility. | |
| dc.language.iso | eng | |
| dc.subject | Temel Bilimler | |
| dc.subject | FİZİK, UYGULAMALI | |
| dc.subject | Fizik | |
| dc.subject | Temel Bilimler (SCI) | |
| dc.title | Electrical and optical properties of point defects in ZnO thin films | |
| dc.type | Makale | |
| dc.relation.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | |
| dc.contributor.department | University Of Delaware , , | |
| dc.identifier.volume | 45 | |
| dc.identifier.issue | 19 | |
| dc.contributor.firstauthorID | 94324 | |
