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Temperature Dependence Electrical Characteristics of n?GaAs Structure Grown by MBE

dc.contributor.authorALTINDAL, Şemsettin
dc.contributor.authorKINACI, BARIŞ
dc.contributor.authorÖZEN, Yunus
dc.contributor.authorMAMMADOV, Tofig
dc.contributor.authorÖZÇELİK, Süleyman
dc.contributor.authorASAR, Tarık
dc.date.accessioned2021-03-03T19:19:54Z
dc.date.available2021-03-03T19:19:54Z
dc.identifier.citationKINACI B., ASAR T., ÖZEN Y., ALTINDAL Ş., MAMMADOV T., ÖZÇELİK S., "Temperature Dependence Electrical Characteristics of n?GaAs Structure Grown by MBE", Azerbaijan Journal of Physics, cilt.16, ss.335-338, 2010
dc.identifier.othervv_1032021
dc.identifier.otherav_53e7763a-6889-4936-be6c-c155c42540ca
dc.identifier.urihttp://hdl.handle.net/20.500.12627/59464
dc.language.isoeng
dc.subjectTemel Bilimler
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.titleTemperature Dependence Electrical Characteristics of n?GaAs Structure Grown by MBE
dc.typeMakale
dc.relation.journalAzerbaijan Journal of Physics
dc.contributor.departmentGazi Üniversitesi , ,
dc.identifier.volume16
dc.identifier.startpage335
dc.identifier.endpage338
dc.contributor.firstauthorID449699


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