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A new approach of hot-carrier degradation and lifetime prediction for N-MOS transistors

dc.contributor.authorKuntman, Hakan
dc.contributor.authorKacar, Firat
dc.contributor.authorKuntman, Ayten
dc.date.accessioned2021-03-03T18:59:51Z
dc.date.available2021-03-03T18:59:51Z
dc.identifier.citationKacar F., Kuntman A., Kuntman H., "A new approach of hot-carrier degradation and lifetime prediction for N-MOS transistors", 13th IEEE Mediterranean Electrotechnical Conference (MELECON 2006), Benalmadena, İspanya, 16 - 19 Mayıs 2006, ss.129-132
dc.identifier.othervv_1032021
dc.identifier.otherav_5229fd86-304e-415b-94fc-a52c3874b533
dc.identifier.urihttp://hdl.handle.net/20.500.12627/58357
dc.identifier.urihttps://doi.org/10.1109/melcon.2006.1653053
dc.description.abstractIn this paper the degradation in the drain current and threshold voltage of the N-MOS transistors are observed by operating the device under stress voltage conditions. Using the observation results the effect of hot-carriers was investigated statistically and a new statistical method for modeling was proposed to be an alternative to those given in the literature. The observed and the estimated values of the degradation are compared.
dc.language.isoeng
dc.subjectSinyal İşleme
dc.subjectMühendislik ve Teknoloji
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMühendislik
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.titleA new approach of hot-carrier degradation and lifetime prediction for N-MOS transistors
dc.typeBildiri
dc.contributor.departmentİstanbul Üniversitesi , Mühendislik Fakültesi , Elektrik-Elektronik Mühendisliği
dc.contributor.firstauthorID131603


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