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dc.contributor.authorDeniz, A. R.
dc.contributor.authorYilmaz, M.
dc.contributor.authorCaldiran, Z.
dc.contributor.authorAydogan, S.
dc.contributor.authorGunturkun, R.
dc.contributor.authorTurut, A.
dc.date.accessioned2021-03-03T15:26:53Z
dc.date.available2021-03-03T15:26:53Z
dc.date.issued2015
dc.identifier.citationYilmaz M., Caldiran Z., Deniz A. R. , Aydogan S., Gunturkun R., Turut A., "Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application", APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.119, sa.2, ss.547-552, 2015
dc.identifier.issn0947-8396
dc.identifier.othervv_1032021
dc.identifier.otherav_3efc6de5-1a41-48ae-a618-203c0def893d
dc.identifier.urihttp://hdl.handle.net/20.500.12627/46173
dc.identifier.urihttps://doi.org/10.1007/s00339-015-8987-5
dc.description.abstractn-ZnO film has been formed on p-Si substrate using sol-gel spin-coating technique. For structural, optical and morphological characterization, the XRD pattern, SEM images and EDX spectra of the n-ZnO film have been obtained. The optical band gap of n-ZnO has been calculated as 3.29 eV. A Schottky diode application of the film has been performed by evaporation of Au on n-ZnO film. It has been seen that the device has exhibited good rectifying behavior. The current-voltage (I-V) and capacitance-voltage (C-V) measurement of the device has been taken as a function of the frequency, at room temperature. Using I-V curve, the ideality factor and barrier height (I broken vertical bar (b)) of n-ZnO have been calculated as 1.93 and 0.80 eV, respectively. (I broken vertical bar (b)) (C-V) has been found 0.86 eV, at 500 kHz frequency.
dc.language.isoeng
dc.subjectTemel Bilimler
dc.subjectTemel Bilimler (SCI)
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.subjectMalzeme Bilimi
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectFizik
dc.subjectFİZİK, UYGULAMALI
dc.subjectMühendislik ve Teknoloji
dc.titlePreparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application
dc.typeMakale
dc.relation.journalAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
dc.contributor.departmentİstanbul Üniversitesi , ,
dc.identifier.volume119
dc.identifier.issue2
dc.identifier.startpage547
dc.identifier.endpage552
dc.contributor.firstauthorID221959


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