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Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells

dc.contributor.authorFontaine, C.
dc.contributor.authorErol, Ayşe
dc.contributor.authorLacoste, G.
dc.contributor.authorArnoult, A.
dc.contributor.authorArikan, Mehmet Çetin
dc.contributor.authorMazzucato, S.
dc.contributor.authorTeke, A.
dc.contributor.authorPotter, R.
dc.contributor.authorBalkan, Naci
dc.contributor.authorMarie, X.
dc.contributor.authorBoland-Thoms, A
dc.contributor.authorCarrere, H.
dc.contributor.authorBedel, E.
dc.date.accessioned2021-03-03T15:13:32Z
dc.date.available2021-03-03T15:13:32Z
dc.identifier.citationMazzucato S., Erol A., Teke A., Arikan M. Ç. , Potter R., Balkan N., Marie X., Boland-Thoms A., Carrere H., Bedel E., et al., "Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells", PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.17, ss.250-251, 2003
dc.identifier.issn1386-9477
dc.identifier.othervv_1032021
dc.identifier.otherav_3de39c88-e281-4377-94a2-d9ae95c6eb70
dc.identifier.urihttp://hdl.handle.net/20.500.12627/45464
dc.identifier.urihttps://doi.org/10.1016/s1386-9477(02)00786-5
dc.description.abstractWe have studied the optical quality of sequentially grown undoped Ga0.8In0.2As and Ga0.8In0.2N0.015As0.985 quantum wells (QWs). Spectral and time-resolved in-plane photovoltage (IPV) and photo-induced transient spectroscopy (PITS) techniques were used in this investigation. Two clear peaks have been observed and analysed in the PITS experiment. Spectral and transient IPV in the same samples has been investigated and a selective light was used as the excitation source to separate the GaInNAs IPV from the other layers. IPV can be explained in terms of random fluctuations of the Fermi level in undoped QWs. Spectral and time-resolved IPV measurements can therefore be used to obtain qualitative and quantitative information about interband transitions and trap activation energies. (C) 2002 Elsevier Science B.V. All rights reserved.
dc.language.isoeng
dc.subjectYüzeyler ve arayüzeyler; İnce filmler ve nanosistemler
dc.subjectTemel Bilimler
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.subjectNANOBİLİM VE NANOTEKNOLOJİ
dc.titlePhoto-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells
dc.typeMakale
dc.relation.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
dc.contributor.department, ,
dc.identifier.volume17
dc.identifier.startpage250
dc.identifier.endpage251
dc.contributor.firstauthorID68810


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