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dc.contributor.authorDonmez, Ömer
dc.contributor.authorSarcan, F.
dc.contributor.authorNutku, Ferhat
dc.contributor.authorMutlu, Selman
dc.contributor.authorKuruoglu, Furkan
dc.contributor.authorArikan, M. C.
dc.contributor.authorYildirim, SAFFETTİN
dc.contributor.authorErol, Ayşe
dc.date.accessioned2021-03-03T12:03:43Z
dc.date.available2021-03-03T12:03:43Z
dc.date.issued2015
dc.identifier.citationSarcan F., Nutku F., Donmez Ö., Kuruoglu F., Mutlu S., Erol A., Yildirim S., Arikan M. C. , "Quantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells", JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.48, sa.30, 2015
dc.identifier.issn0022-3727
dc.identifier.othervv_1032021
dc.identifier.otherav_2ba0247b-413a-4a6f-b78e-bf17eab97784
dc.identifier.urihttp://hdl.handle.net/20.500.12627/34076
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84937019869&origin=inward
dc.identifier.urihttps://doi.org/10.1088/0022-3727/48/30/305108
dc.description.abstractWe have performed magnetoresistance measurements on n- and p-type modulation doped GaInNAs/GaAs quantum well (QW) structures in both the weak (B < 0.08 T) and the high magnetic field (up to 18 T) at 75 mK and 6 K. We observe that the quantum oscillations in rho(xx) and quantum Hall effect (QHE) plateaus in rho(xy) are affected from the presence of the nitrogen in the III-V lattice. The enhancement of n- related scatterings and electron effective mass with increasing nitrogen causes lower electron mobility and higher two-dimensional (2D) electron density, leading to suppressed QHE plateaus in rho(xy) up to 7 T at 6 K. The Shubnikov de Haas (SdH) oscillations develop at lower magnetic fields for higher mobility samples at 6 K and the amplitude of SdH oscillations decreases with increasing nitrogen composition. The well-pronounced QHE plateaus are observed at 75 mK and at higher magnetic fields up to 18 T, for the p-type sample. For n- type samples, the observed anomalies in the characteristic of QHE is attributed the nitrogen-related disorders and overlapping of fluctuating Landau levels. The low magnetic field measurements at 75 mK reveal that the n-type samples exhibit weak antilocalization, whereas weak localization is observed for the p-type sample. The observation of weak antilocalization is an indication of strong electron spin-orbit interactions. The low field magnetoresistance traces are used to extract the spin coherence, phase coherence and elastic scattering times as well Rashba parameters and spin-splitting energy. The calculated Rashba parameters for nitrogen containing samples reveal that the nitrogen composition is a significant parameter to determine the degree of the spin-orbit interactions. Consequently, GaInNAs-based QW structures with various nitrogen compositions can be beneficial to adjust the spin-orbit coupling strength and may be used as a candidate for spintronics applications.
dc.language.isoeng
dc.subjectFİZİK, UYGULAMALI
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectTemel Bilimler
dc.titleQuantum oscillations and interference effects in strained n- and p-type modulation doped GaInNAs/GaAs quantum wells
dc.typeMakale
dc.relation.journalJOURNAL OF PHYSICS D-APPLIED PHYSICS
dc.contributor.departmentİstanbul Üniversitesi , ,
dc.identifier.volume48
dc.identifier.issue30
dc.contributor.firstauthorID77659


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