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dc.contributor.authorAnagnostopoulos, A. N.
dc.contributor.authorPapadopoulos, D.
dc.contributor.authorKALKAN, Nevin
dc.contributor.authorSpyridelis, J.
dc.date.accessioned2021-03-03T08:36:45Z
dc.date.available2021-03-03T08:36:45Z
dc.date.issued1993
dc.identifier.citationKALKAN N., Papadopoulos D., Anagnostopoulos A. N. , Spyridelis J., "STRUCTURAL AND PHOTOELECTRONIC PROPERTIES OF THALLIUM INDIUM SULFIDE", MATERIALS RESEARCH BULLETIN, cilt.28, sa.7, ss.693-707, 1993
dc.identifier.issn0025-5408
dc.identifier.otherav_1883acf2-df81-470d-ac49-a23ee649ecbb
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/21782
dc.identifier.urihttps://doi.org/10.1016/0025-5408(93)90113-r
dc.description.abstractA structural investigation by Transmission Electron Microscopy confirmed the presence of planar faults parallel to the (001)tetr-plane of TlInS2. Their density corresponds to a mean repeat distance of about eight times the lattice parameter c. On the other hand, two energy levels forming two subbands and acting as hole traps at 0.028 and 0.050 eV above the valence band edge of TlInS2 were determined by an analysis of modulated photocurrents induced by an intensity modulated light beam. Their capture coefficients were of the order of magnitude 10(-13) and 10(-15) cm3 s-1 at 300 K, respectively.
dc.language.isoeng
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.subjectMalzeme Bilimi
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMühendislik ve Teknoloji
dc.titleSTRUCTURAL AND PHOTOELECTRONIC PROPERTIES OF THALLIUM INDIUM SULFIDE
dc.typeMakale
dc.relation.journalMATERIALS RESEARCH BULLETIN
dc.contributor.department, ,
dc.identifier.volume28
dc.identifier.issue7
dc.identifier.startpage693
dc.identifier.endpage707
dc.contributor.firstauthorID45475


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