dc.contributor.author | Mutlu, Selman | |
dc.contributor.author | Hilska, Joonas | |
dc.contributor.author | Puustinen, Janne | |
dc.contributor.author | Aydin, Mustafa | |
dc.contributor.author | Erol, Ayşe | |
dc.contributor.author | Dönmez, Ömer | |
dc.contributor.author | Guina, Mircea | |
dc.date.accessioned | 2023-02-21T08:35:59Z | |
dc.date.available | 2023-02-21T08:35:59Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Aydin M., Mutlu S., Erol A., Puustinen J., Hilska J., Guina M., Dönmez Ö., "High-Field Electron-Drift Velocity in n-Type Modulation-Doped GaAs0.96Bi0.04 Quantum Well Structure", PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, cilt.16, sa.11, 2022 | |
dc.identifier.issn | 1862-6254 | |
dc.identifier.other | vv_1032021 | |
dc.identifier.other | av_1e34935e-9b8f-4998-816b-dac82e1f7bf3 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/186797 | |
dc.identifier.uri | https://doi.org/10.1002/pssr.202200204 | |
dc.description.abstract | The drift velocity (v(drift)) of electrons in an n-type modulation-doped GaAs0.96Bi0.04/Al0.15Ga0.85As quantum well (QW) structure is determined for electric fields (F) ranging from approximate to 0.4 to 3.58 kV cm(-1). The resulting v(drift) characteristic exhibited a linear increase and reached approximate to 6 x 10(6) cm s(-1) at low electric fields then almost saturated with increasing electric field. The electron drift mobility is determined as 2265 cm(2) Vs(-1) in the regime where the drift velocity is linear with respect to the electric field. The drift velocity saturates at approximate to 6.1 x 10(6) cm s(-1) at the electric fields between approximate to 2.7 and 3.4 kV cm(-1). Saturation of the drift velocity is attributed to the transfer of the electrons from the QW layer (GaAs0.96Bi0.04) with higher electron mobility to the barrier layer (Al0.15Ga0.85As) and satellite valley L-valley with lower electron mobility, which initiates cooling of electrons via phonon scattering in the sample. | |
dc.language.iso | eng | |
dc.subject | MALZEME BİLİMİ, ÇOKDİSİPLİNLİ | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | FİZİK, YOĞUN MADDE | |
dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
dc.subject | Temel Bilimler | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | İstatistiksel ve Doğrusal Olmayan Fizik | |
dc.subject | Yoğun Madde Fiziği | |
dc.subject | Metaller ve Alaşımlar | |
dc.subject | Malzeme Kimyası | |
dc.subject | Elektronik, Optik ve Manyetik Malzemeler | |
dc.subject | Genel Malzeme Bilimi | |
dc.subject | Fizik Bilimleri | |
dc.subject | FİZİK, UYGULAMALI | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | Malzeme Bilimi | |
dc.subject | Fizik | |
dc.title | High-Field Electron-Drift Velocity in n-Type Modulation-Doped GaAs0.96Bi0.04 Quantum Well Structure | |
dc.type | Makale | |
dc.relation.journal | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | |
dc.contributor.department | İstanbul Üniversitesi , , | |
dc.identifier.volume | 16 | |
dc.identifier.issue | 11 | |
dc.contributor.firstauthorID | 4244203 | |