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Electrical and photovoltaic properties of Cr/Si Schottky diodes

dc.contributor.authorAydogan, Pelin
dc.contributor.authorYilmazer, Deneb
dc.contributor.authorÖZDEMİR, Orhan
dc.contributor.authorKUTLU, Kubilay
dc.contributor.authorTatar, Beyhan
dc.contributor.authorBULGURCUOĞLU, Ayşe Evrim
dc.contributor.authorCHOI, Fatma Pınar
dc.date.accessioned2022-02-18T11:08:30Z
dc.date.available2022-02-18T11:08:30Z
dc.date.issued2009
dc.identifier.citationTatar B., BULGURCUOĞLU A. E. , CHOI F. P. , Aydogan P., Yilmazer D., ÖZDEMİR O., KUTLU K., "Electrical and photovoltaic properties of Cr/Si Schottky diodes", INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, cilt.34, sa.12, ss.5208-5212, 2009
dc.identifier.issn0360-3199
dc.identifier.othervv_1032021
dc.identifier.otherav_d982e996-47fd-4b5c-aab2-6c8a0028a612
dc.identifier.urihttp://hdl.handle.net/20.500.12627/180563
dc.identifier.urihttps://doi.org/10.1016/j.ijhydene.2008.10.040
dc.description.abstractThe electrical properties of the Cr/p-Si(111) and Cr/n-Si(100) junctions were investigated through capacitance-voltage and current-voltage measurements, performed under dark and light conditions at room temperature. Diode parameters of Cr/Si Schottky diode like ideality factor and barrier height were obtained and variations of them were monitored as a function of temperatures. Also, an attempt to explore the governing current flow mechanism was tried. The reverse biased I-V measurement under illumination exhibited anomalous behavior as well as high photosensitivity. The former was explained in terms of minority carrier injection phenomenon. The photovoltaic parameters, such as open circuit voltage and short circuit current were obtained as 370 mV and I(sc) = 44.5 mu A, respectively. (c) 2008 International Association for Hydrogen Energy. Published by Elsevier Ltd. All rights reserved.
dc.language.isoeng
dc.subjectGeneral Engineering
dc.subjectElectrochemistry
dc.subjectGeneral Energy
dc.subjectChemistry (miscellaneous)
dc.subjectEngineering (miscellaneous)
dc.subjectFuel Technology
dc.subjectPhysical and Theoretical Chemistry
dc.subjectSurfaces, Coatings and Films
dc.subjectEnergy (miscellaneous)
dc.subjectPhysical Sciences
dc.subjectGeneral Chemistry
dc.subjectKİMYA, FİZİKSEL
dc.subjectKimya
dc.subjectTemel Bilimler (SCI)
dc.subjectELEKTROKİMYA
dc.subjectENERJİ VE YAKITLAR
dc.subjectMühendislik
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectTarımsal Bilimler
dc.subjectZiraat
dc.subjectTarım Makineleri
dc.subjectTarımda Enerji
dc.subjectBiyoyakıt Teknolojisi
dc.subjectFizikokimya
dc.subjectElektrokimya
dc.subjectTemel Bilimler
dc.subjectMühendislik ve Teknoloji
dc.subjectEnergy Engineering and Power Technology
dc.subjectSurfaces and Interfaces
dc.subjectRenewable Energy, Sustainability and the Environment
dc.titleElectrical and photovoltaic properties of Cr/Si Schottky diodes
dc.typeMakale
dc.relation.journalINTERNATIONAL JOURNAL OF HYDROGEN ENERGY
dc.contributor.departmentYıldız Teknik Üniversitesi , ,
dc.identifier.volume34
dc.identifier.issue12
dc.identifier.startpage5208
dc.identifier.endpage5212
dc.contributor.firstauthorID3051060


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