Optical and electrical characterızatıon of InGaAs epitaxial layers

Abstract

InGaAs alloy is a semiconductor material that is used commercially in detectors operating in the IR region by changing the composition of the In in a controlled growth processes, by tailoring the bandgap to about 0.75eV. The bandgap corresponds to around 1.60 µm, and it has the potential to be used as an optoelectronic device that radiates around this wavelength. In this study, optical and electrical characterization of In0.53GaA0.47As epilayer with different thicknesses and carrier consantrations grown on semi-insulator InP using Metal Organic Vapour Phase Epitaxy (MOVPE). Tempereture dependence of bandgap of the samples were obtained using photoluminescence measurements. Hall effect was used to determine carrier concentrations, and carrier mobilities at the temperature range between 77K-300K.