dc.contributor.author | Tatar, Beyhan | |
dc.date.accessioned | 2022-02-18T10:28:22Z | |
dc.date.available | 2022-02-18T10:28:22Z | |
dc.date.issued | 2008 | |
dc.identifier.citation | Tatar B., "Electrical Properties of Cr/p-type Si Schottky Diodes at room Temperature", BALKAN PHYSICS LETTERS, sa.24 th INTERNATIONAL PHYSICS CONGRESS, ss.448-450, 2008 | |
dc.identifier.other | vv_1032021 | |
dc.identifier.other | av_9f2c80d7-2beb-4181-8ee7-b76c2f508f81 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/179307 | |
dc.description.abstract | The conduction mechanism and electronic properties obtained from current-voltage characteristics (I-V) of Cr/p-Si Schottky barrier diode (SBD) at room temperature have been investigated. The Schottky barrier diode parameters such as zero-bias barrier height and ideality factor were determined using different method. The ideality factor (n), zero-bias barrier height (ĭB0) value at different method was found as 1.18-1.2 and 0.63-0.65 eV, respectively. Higher and lower electric fields are usually attributed various conduction mechanisms. The different conduction mechanism such as space charge limited conduction (SCLC), Schottky-type conduction and Poole-Frenkel conduction mechanism can be dominant in the studied. | |
dc.language.iso | eng | |
dc.subject | Temel Bilimler | |
dc.subject | Multidisciplinary | |
dc.subject | ÇOK DİSİPLİNLİ BİLİMLER | |
dc.subject | Doğa Bilimleri Genel | |
dc.subject | Temel Bilimler (SCI) | |
dc.title | Electrical Properties of Cr/p-type Si Schottky Diodes at room Temperature | |
dc.type | Makale | |
dc.relation.journal | BALKAN PHYSICS LETTERS | |
dc.contributor.department | Yıldız Teknik Üniversitesi , Fen-Edebiyat Fakültesi , Fizik Bölümü | |
dc.identifier.issue | 24 th INTERNATIONAL PHYSICS CONGRESS | |
dc.identifier.startpage | 448 | |
dc.identifier.endpage | 450 | |
dc.contributor.firstauthorID | 3051368 | |