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Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

dc.contributor.authorCalmeiro, T.
dc.contributor.authorBarriga, J.
dc.contributor.authorNunes, D.
dc.contributor.authorMartins, R.
dc.contributor.authorFortunato, E.
dc.contributor.authorBayon, R.
dc.contributor.authorGalindo, R. Escobar
dc.contributor.authorBarros, R.
dc.contributor.authorZubizarreta, C.
dc.contributor.authorBerasategui, E. G.
dc.contributor.authorGaspar, D.
dc.date.accessioned2022-02-18T09:58:50Z
dc.date.available2022-02-18T09:58:50Z
dc.date.issued2014
dc.identifier.citationZubizarreta C., Berasategui E. G. , Bayon R., Galindo R. E. , Barros R., Gaspar D., Nunes D., Calmeiro T., Martins R., Fortunato E., et al., "Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering", JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.47, sa.48, 2014
dc.identifier.issn0022-3727
dc.identifier.otherav_702eac40-b3c5-495c-9618-9dafc9e98efa
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/178356
dc.identifier.urihttps://doi.org/10.1088/0022-3727/47/48/485501
dc.description.abstractThe main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices.
dc.language.isoeng
dc.subjectFizik
dc.subjectPhysical Sciences
dc.subjectStatistical and Nonlinear Physics
dc.subjectTemel Bilimler
dc.subjectTemel Bilimler (SCI)
dc.subjectFİZİK, UYGULAMALI
dc.titleEvaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering
dc.typeMakale
dc.relation.journalJOURNAL OF PHYSICS D-APPLIED PHYSICS
dc.contributor.departmentIK4 TEKNIKER , ,
dc.identifier.volume47
dc.identifier.issue48
dc.contributor.firstauthorID3382669


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