dc.contributor.author | Tatar, Beyhan | |
dc.contributor.author | Ürgen, Mustafa Kamil | |
dc.contributor.author | KUTLU, Kubilay | |
dc.contributor.author | Menda, Ugur Deneb | |
dc.contributor.author | ÖZDEMİR, Orhan | |
dc.date.accessioned | 2022-02-18T09:26:20Z | |
dc.date.available | 2022-02-18T09:26:20Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Menda U. D. , ÖZDEMİR O., Tatar B., Ürgen M. K. , KUTLU K., "Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique", MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.13, sa.4, ss.257-266, 2010 | |
dc.identifier.issn | 1369-8001 | |
dc.identifier.other | vv_1032021 | |
dc.identifier.other | av_3b5fbb8e-94eb-41b8-8812-f688187813dd | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/177210 | |
dc.identifier.uri | https://doi.org/10.1016/j.mssp.2010.12.002 | |
dc.description.abstract | p-CrSi2/n-crystSi and p-CrSi2/p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of capacitance-voltage-temperature (C-V-T) and current-voltage-temperature (I-V-T) measurements to investigate storage and transport properties. Former measurement on p-CrSi2/n-crystSi structure confirmed an abrupt type junction together with a building voltage at the proximity of 0.7 V. Though a fairly well rectification ratio (10(3) at +/- 2 V) was realized by I-V measurement, it became deteriorated with the increase in ambient temperature. From temperature dependence of I-V variations, distinct conduction mechanisms were identified. In forward (reverse) direction trap assisted single-multistep tunneling recombination (generation) and space-charge limited current flow that corresponded to low and high bias voltage regions, respectively, were identified. Moreover, an activation energy (E-A) determined from the slopes of I-V-T curves as 0.22 and 0.26 eV was interpreted as the energy position of a chromium-boron (Cr-B) complex-type point defect residing in n/p doped c-Si semiconductor in CrSi2/n-c-Si and CrSi2/p-c-Si junctions. The retrieved E-A was in agreement with the recent DLTS measurement. Based on the experimental observations, schematic current path was built to interpret I-V/C-V behaviors. The model was successful in explaining the decrease in measured capacitance under large forward bias voltage reported for the first time by us for the present CrSi2/Si junctions. (C) 2010 Elsevier Ltd. All rights reserved. | |
dc.language.iso | eng | |
dc.subject | Materials Chemistry | |
dc.subject | General Engineering | |
dc.subject | Statistical and Nonlinear Physics | |
dc.subject | Electronic, Optical and Magnetic Materials | |
dc.subject | General Materials Science | |
dc.subject | Electrical and Electronic Engineering | |
dc.subject | Physical Sciences | |
dc.subject | Engineering (miscellaneous) | |
dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
dc.subject | Mühendislik | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | MALZEME BİLİMİ, MULTIDISCIPLINARY | |
dc.subject | Malzeme Bilimi | |
dc.subject | FİZİK, UYGULAMALI | |
dc.subject | Fizik | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | FİZİK, YOĞUN MADDE | |
dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
dc.subject | Sinyal İşleme | |
dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
dc.subject | Temel Bilimler | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | Condensed Matter Physics | |
dc.subject | Signal Processing | |
dc.subject | Metals and Alloys | |
dc.title | Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique | |
dc.type | Makale | |
dc.relation.journal | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | |
dc.contributor.department | Yıldız Teknik Üniversitesi , , | |
dc.identifier.volume | 13 | |
dc.identifier.issue | 4 | |
dc.identifier.startpage | 257 | |
dc.identifier.endpage | 266 | |
dc.contributor.firstauthorID | 3051044 | |