Muonium-acceptor interactions in gallium phosphide

Abstract

Zero-field muon spin depolarization measurements on heavily Zn-doped p-type GaP reveal several different states related to the Mu(+) defect center. We find that the Mu(BC)(+) ground state becomes mobile near 200 K. At slightly higher temperature Mu+ motion involves a second site, suggested to be T(P), which is relatively long lived up to 270 K. Zn-Mu complexes are formed at both low and high temperatures by reaction of Zn with a mobile Mu center, Mu(T)(0) below 100 K and Mu(T)(+) above 400 K. The high-temperature complex dissociates above 700 K with a characteristic energy of 1.3 eV. (C) 2002 Elsevier Science B.V. All rights reserved.