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dc.contributor.authorKalkan, Nevin
dc.contributor.authorAnagnostopoulos, A. N.
dc.contributor.authorHanias, M.
dc.contributor.authorKalomiros, J. A.
dc.date.accessioned2021-03-06T11:09:09Z
dc.date.available2021-03-06T11:09:09Z
dc.date.issued1996
dc.identifier.citationKalkan N., Kalomiros J. A. , Hanias M., Anagnostopoulos A. N. , "Optical and photoelectrical properties of the TlGaS2 ternary compound", SOLID STATE COMMUNICATIONS, cilt.99, ss.375-379, 1996
dc.identifier.issn0038-1098
dc.identifier.othervv_1032021
dc.identifier.otherav_edb508c4-cf5c-42af-a634-032b9e6a2bd6
dc.identifier.urihttp://hdl.handle.net/20.500.12627/156058
dc.identifier.urihttps://doi.org/10.1016/0038-1098(96)00294-3
dc.description.abstractAbsorption and photoconductivity spectra of thin TlGaS2 layers are used to study the fundamental and other transitions of TlGaS2 in the energy region 1.0-3.0 eV and in the temperature range 10-300 K. One of the peaks resolved by photoconductivity measurements corresponds to the excitonic peak registered in the absorption spectrum of this compound. The temperature dependence of the critical energy and of the broadening parameter of this excitonic peak are presented. Most of the rest photoconductivity peaks are related to transitions from localized levels to the conduction band. Copyright (C) 1996 Elsevier Science Ltd
dc.language.isoeng
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectTemel Bilimler
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.titleOptical and photoelectrical properties of the TlGaS2 ternary compound
dc.typeMakale
dc.relation.journalSOLID STATE COMMUNICATIONS
dc.contributor.department, ,
dc.identifier.volume99
dc.identifier.issue6
dc.identifier.startpage375
dc.identifier.endpage379
dc.contributor.firstauthorID45471


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