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dc.contributor.authorOylumluoglu, G.
dc.contributor.authorSiddiki, A.
dc.contributor.authorErkaslan, U.
dc.contributor.authorSokmen, I.
dc.contributor.authorGulebaglan, S. Erden
dc.date.accessioned2021-03-06T09:44:18Z
dc.date.available2021-03-06T09:44:18Z
dc.identifier.citationGulebaglan S. E. , Oylumluoglu G., Erkaslan U., Siddiki A., Sokmen I., "The effect of disorder on integer quantized Hall effect", PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.44, ss.1495-1502, 2012
dc.identifier.issn1386-9477
dc.identifier.othervv_1032021
dc.identifier.otherav_e6eb37f3-93e5-49ee-85e7-00a8167371db
dc.identifier.urihttp://hdl.handle.net/20.500.12627/151892
dc.identifier.urihttps://doi.org/10.1016/j.physe.2012.03.017
dc.description.abstractWe study the effects of disorder on the integer quantized Hall effect within the screening theory, systematically. The disorder potential is analyzed considering the range of the potential fluctuations. The short-range potential fluctuations ( less than or similar to 20 nm) stems from single impurities and defines the Landau level broadening, whereas, the long-range potential fluctuations ( greater than or similar to 200 nm) are calculated from the potential overlap of many-impurities, which in turn determines the widths of the plateaus. The short-range part is taken into account via self-consistent Born approximation hence determining the conductivities and a local version of Ohm's law is utilized to define charge transport. We investigate the long range potential fluctuations taking into account interaction effects and explore its effect on the formation of quantum Hall plateaus depending on the number of impurities, the amplitude of the impurity potential and the separation thickness by solving the 3D Poisson equation iteratively. We discuss the long range part of the potential fluctuations by investigating the Coulomb interaction of the two dimension electron gas numerically. We show that the widths of the quantized Hall plateaus increase with increasing disorder, whereas the influence of level broadening is suppressed at narrow Hall bars. (c) 2012 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.subjectYüzeyler ve arayüzeyler; İnce filmler ve nanosistemler
dc.subjectTemel Bilimler
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.subjectNANOBİLİM VE NANOTEKNOLOJİ
dc.titleThe effect of disorder on integer quantized Hall effect
dc.typeMakale
dc.relation.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
dc.contributor.departmentDokuz Eylül Üniversitesi , ,
dc.identifier.volume44
dc.identifier.startpage1495
dc.identifier.endpage1502
dc.contributor.firstauthorID204048


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