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dc.contributor.authorBalkan, N
dc.contributor.authorErol, Ayşe
dc.contributor.authorArikan, MC
dc.contributor.authorRoberts, J
dc.contributor.authorSerpenguzel, A
dc.date.accessioned2021-03-06T08:29:01Z
dc.date.available2021-03-06T08:29:01Z
dc.identifier.citationSerpenguzel A., Balkan N., Erol A., Arikan M., Roberts J., "Temperature dependence of the threshold electric field in a hot electron VCSEL", Conference on Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, San-Jose, Kostarika, 24 - 27 Ocak 2005, cilt.5725, ss.194-201
dc.identifier.othervv_1032021
dc.identifier.otherav_e123bd8e-5f0a-4523-8429-b2ca48798492
dc.identifier.urihttp://hdl.handle.net/20.500.12627/148248
dc.identifier.urihttps://doi.org/10.1117/12.591107
dc.description.abstractThe operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure - Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga1-xAlxAs p-n junction. It is therefore a field - effect device and the light emission from the device is independent of the polarity of the applied voltage. In this study, we present the temperature dependence of the operational characteristics of the device. Experimental studies comprising of the measurements of the IN characteristics, electroluminescence, reflectivity, and temperature dependent light-applied electric field (L-F) characteristics are conducted to find the optimum operating temperature of the device.
dc.language.isoeng
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectTemel Bilimler
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.subjectFİZİK, YOĞUN MADDE
dc.titleTemperature dependence of the threshold electric field in a hot electron VCSEL
dc.typeBildiri
dc.contributor.department, ,
dc.identifier.volume5725
dc.contributor.firstauthorID732714


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