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dc.contributor.authorGupta, Gautam
dc.contributor.authorACERCE, Muharrem
dc.contributor.authorAjayan, Pulickel M
dc.contributor.authorMohite, Aditya D
dc.contributor.authorChhowalla, Manish
dc.contributor.authorKappera, Rajesh
dc.contributor.authorVoiry, Damien
dc.contributor.authorYalcin, Sibel Ebru
dc.contributor.authorJen, Wesley
dc.contributor.authorTorrel, Sol
dc.contributor.authorBranch, Brittany
dc.contributor.authorLei, Sidong
dc.contributor.authorChen, Weibing
dc.contributor.authorNajmaei, Sina
dc.contributor.authorLou, Jun
dc.date.accessioned2021-03-06T07:30:17Z
dc.date.available2021-03-06T07:30:17Z
dc.date.issued2014
dc.identifier.citationKappera R., Voiry D., ACERCE M., Yalcin S. E. , Jen W., Torrel S., Branch B., Lei S., Chen W., Najmaei S., et al., "Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2", APL MATERIALS, cilt.2, ss.92516, 2014
dc.identifier.issn2166-532X
dc.identifier.othervv_1032021
dc.identifier.otherav_dcb0dd94-7f09-4659-90ad-2158122320fa
dc.identifier.urihttp://hdl.handle.net/20.500.12627/145440
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.4896077
dc.language.isoeng
dc.subjectMetalurji ve Malzeme Mühendisliği
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMalzeme Bilimi
dc.subjectMühendislik ve Teknoloji
dc.titleMetallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
dc.typeMakale
dc.relation.journalAPL MATERIALS
dc.contributor.department, ,
dc.identifier.volume2
dc.identifier.issue9
dc.identifier.startpage92516
dc.identifier.endpage92516
dc.contributor.firstauthorID349180


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