Effect of Alloy and Interface Roughness Scatterings On The Carrier Mobility in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Well Structures

dc.contributor.author	Puustinen, Janne
dc.contributor.author	Guina, Mircea
dc.contributor.author	SARCAN, Fahrettin
dc.contributor.author	DÖNMEZ, Ömer
dc.contributor.author	EROL, Ayşe
dc.contributor.author	ARIKAN, Mehmet Çetin
dc.contributor.author	Vaughan, Martin P
dc.date.accessioned	2021-03-05T20:53:49Z
dc.date.available	2021-03-05T20:53:49Z
dc.identifier.citation	SARCAN F., DÖNMEZ Ö., Vaughan M. P. , EROL A., ARIKAN M. Ç. , Puustinen J., Guina M., "Effect of Alloy and Interface Roughness Scatterings On The Carrier Mobility in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Well Structures", 17th European Molecular Beam Epitaxy Workshop, Levi, Finlandiya, 10 - 13 Mart 2013, ss.246
dc.identifier.other	av_d6566e7c-3ff4-41ba-b1fa-539ea9335b5d
dc.identifier.other	vv_1032021
dc.identifier.uri	http://hdl.handle.net/20.500.12627/141447
dc.language.iso	eng
dc.subject	Temel Bilimler (SCI)
dc.subject	Temel Bilimler
dc.subject	Fizik
dc.title	Effect of Alloy and Interface Roughness Scatterings On The Carrier Mobility in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Well Structures
dc.type	Bildiri
dc.contributor.department	, ,
dc.contributor.firstauthorID	452168

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