| dc.contributor.author | Takagi, Shigetaga | |
| dc.contributor.author | Yarman, B. Siddik | |
| dc.contributor.author | Fujii, Nobuo | |
| dc.contributor.author | Retdian, Nicodimus | |
| dc.date.accessioned | 2021-03-05T20:08:33Z | |
| dc.date.available | 2021-03-05T20:08:33Z | |
| dc.identifier.citation | Yarman B. S. , Retdian N., Takagi S., Fujii N., "Gain-bandwidth limitations of 0.18 mu m Si-CMOS RF technology", 18th European Conference on Circuit Theory Design, Sevilla, İspanya, 26 - 30 Ağustos 2007, ss.264-265 | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.other | av_d297b5b1-c033-4a78-b2dc-7a3ba13192e7 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/139115 | |
| dc.identifier.uri | https://doi.org/10.1109/ecctd.2007.4529587 | |
| dc.description.abstract | In this paper., gain bandwidth limitations of' a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency hand of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely he utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems; placed silicon chips up to X-Band. | |
| dc.language.iso | eng | |
| dc.subject | Sinyal İşleme | |
| dc.subject | Mühendislik ve Teknoloji | |
| dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
| dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
| dc.subject | Mühendislik | |
| dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
| dc.title | Gain-bandwidth limitations of 0.18 mu m Si-CMOS RF technology | |
| dc.type | Bildiri | |
| dc.contributor.department | Tokyo Institute of Technology , , | |
| dc.contributor.firstauthorID | 133311 | |
