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dc.contributor.authorTakagi, Shigetaga
dc.contributor.authorYarman, B. Siddik
dc.contributor.authorFujii, Nobuo
dc.contributor.authorRetdian, Nicodimus
dc.date.accessioned2021-03-05T20:08:33Z
dc.date.available2021-03-05T20:08:33Z
dc.identifier.citationYarman B. S. , Retdian N., Takagi S., Fujii N., "Gain-bandwidth limitations of 0.18 mu m Si-CMOS RF technology", 18th European Conference on Circuit Theory Design, Sevilla, İspanya, 26 - 30 Ağustos 2007, ss.264-265
dc.identifier.othervv_1032021
dc.identifier.otherav_d297b5b1-c033-4a78-b2dc-7a3ba13192e7
dc.identifier.urihttp://hdl.handle.net/20.500.12627/139115
dc.identifier.urihttps://doi.org/10.1109/ecctd.2007.4529587
dc.description.abstractIn this paper., gain bandwidth limitations of' a regularly processed 0.18 mu m Si CMOS FET is investigated over the frequency hand of 450MHz-10GHz. It is exhibited that 0.18 mu m Si CMOS processing technology can safely he utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems; placed silicon chips up to X-Band.
dc.language.isoeng
dc.subjectSinyal İşleme
dc.subjectMühendislik ve Teknoloji
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectMühendislik
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.titleGain-bandwidth limitations of 0.18 mu m Si-CMOS RF technology
dc.typeBildiri
dc.contributor.departmentTokyo Institute of Technology , ,
dc.contributor.firstauthorID133311


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