dc.contributor.author | CANTILE, M | |
dc.contributor.author | YILDIRIM, Saffettin | |
dc.contributor.author | MARGARITONDO, G | |
dc.contributor.author | SORBA, L | |
dc.contributor.author | FRANCIOSI, A | |
dc.contributor.author | DELLORTO, T | |
dc.contributor.author | ALMEIDA, J | |
dc.contributor.author | COLUZZA, C | |
dc.contributor.author | BALDERESCHI, A | |
dc.date.accessioned | 2021-03-05T18:55:31Z | |
dc.date.available | 2021-03-05T18:55:31Z | |
dc.date.issued | 1994 | |
dc.identifier.citation | DELLORTO T., ALMEIDA J., COLUZZA C., BALDERESCHI A., MARGARITONDO G., CANTILE M., YILDIRIM S., SORBA L., FRANCIOSI A., "INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS", APPLIED PHYSICS LETTERS, cilt.64, ss.2111-2113, 1994 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.other | av_ccb728b0-016a-4a34-a718-5020823bd32b | |
dc.identifier.other | vv_1032021 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/135526 | |
dc.identifier.uri | https://doi.org/10.1063/1.111699 | |
dc.description.abstract | Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate. | |
dc.language.iso | eng | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | FİZİK, UYGULAMALI | |
dc.subject | Fizik | |
dc.subject | Temel Bilimler | |
dc.title | INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS | |
dc.type | Makale | |
dc.relation.journal | APPLIED PHYSICS LETTERS | |
dc.contributor.department | , , | |
dc.identifier.volume | 64 | |
dc.identifier.issue | 16 | |
dc.identifier.startpage | 2111 | |
dc.identifier.endpage | 2113 | |
dc.contributor.firstauthorID | 2182164 | |