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INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS

dc.contributor.authorCANTILE, M
dc.contributor.authorYILDIRIM, Saffettin
dc.contributor.authorMARGARITONDO, G
dc.contributor.authorSORBA, L
dc.contributor.authorFRANCIOSI, A
dc.contributor.authorDELLORTO, T
dc.contributor.authorALMEIDA, J
dc.contributor.authorCOLUZZA, C
dc.contributor.authorBALDERESCHI, A
dc.date.accessioned2021-03-05T18:55:31Z
dc.date.available2021-03-05T18:55:31Z
dc.date.issued1994
dc.identifier.citationDELLORTO T., ALMEIDA J., COLUZZA C., BALDERESCHI A., MARGARITONDO G., CANTILE M., YILDIRIM S., SORBA L., FRANCIOSI A., "INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS", APPLIED PHYSICS LETTERS, cilt.64, ss.2111-2113, 1994
dc.identifier.issn0003-6951
dc.identifier.otherav_ccb728b0-016a-4a34-a718-5020823bd32b
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/135526
dc.identifier.urihttps://doi.org/10.1063/1.111699
dc.description.abstractInternal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.
dc.language.isoeng
dc.subjectTemel Bilimler (SCI)
dc.subjectFİZİK, UYGULAMALI
dc.subjectFizik
dc.subjectTemel Bilimler
dc.titleINTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS
dc.typeMakale
dc.relation.journalAPPLIED PHYSICS LETTERS
dc.contributor.department, ,
dc.identifier.volume64
dc.identifier.issue16
dc.identifier.startpage2111
dc.identifier.endpage2113
dc.contributor.firstauthorID2182164


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