dc.contributor.author | Sezgin-Ugranli, Hatice Gul | |
dc.contributor.author | Ozcelep, Yasin | |
dc.date.accessioned | 2021-03-05T17:13:21Z | |
dc.date.available | 2021-03-05T17:13:21Z | |
dc.date.issued | 2018 | |
dc.identifier.citation | Sezgin-Ugranli H. G. , Ozcelep Y., "A New Approach for VDMOSFETs' Gate Oxide Degradation Based on Capacitance and Subthreshold Current Measurements Under Constant Electrical Stress", IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.65, ss.1650-1652, 2018 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.other | av_c47c35eb-cae1-435c-9e37-66f99dc25e1a | |
dc.identifier.other | vv_1032021 | |
dc.identifier.uri | http://hdl.handle.net/20.500.12627/130319 | |
dc.identifier.uri | https://doi.org/10.1109/ted.2018.2808162 | |
dc.description.abstract | In this brief, we proposed a new gate oxide degradation model for vertical double diffused MOS devices under constant electrical stress. To form a complete model, we separated the changes associated with gate oxide and Si-SiO2 interface. We presented oxide trap-induced gate oxide and interface trap-induced Si-SiO2 interface degradation effects on the model, separately. We used capacitance measurements for gate oxide and subthreshold current measurements for Si-SiO2 interface degradation. We presented the survive of the stress-induced gate oxide and interface capacitances during stress time. We also expressed the mathematical expressions for parts of the proposed model. | |
dc.language.iso | eng | |
dc.subject | Temel Bilimler | |
dc.subject | Mühendislik ve Teknoloji | |
dc.subject | Temel Bilimler (SCI) | |
dc.subject | Sinyal İşleme | |
dc.subject | Bilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği | |
dc.subject | Fizik | |
dc.subject | FİZİK, UYGULAMALI | |
dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
dc.subject | Mühendislik | |
dc.subject | MÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK | |
dc.title | A New Approach for VDMOSFETs' Gate Oxide Degradation Based on Capacitance and Subthreshold Current Measurements Under Constant Electrical Stress | |
dc.type | Makale | |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | |
dc.contributor.department | Bartın Üniversitesi , , | |
dc.identifier.volume | 65 | |
dc.identifier.issue | 4 | |
dc.identifier.startpage | 1650 | |
dc.identifier.endpage | 1652 | |
dc.contributor.firstauthorID | 252412 | |