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dc.contributor.authorChow, KH
dc.contributor.authorLichti, RL
dc.contributor.authorCelebi, Yaşar Gürkan
dc.contributor.authorCox, SFJ
dc.contributor.authorHitti, B
dc.date.accessioned2021-03-05T17:03:39Z
dc.date.available2021-03-05T17:03:39Z
dc.identifier.citationLichti R., Celebi Y. G. , Chow K., Hitti B., Cox S., "Trapping of mobile Mu centers in single crystal AlN", PHYSICA B-CONDENSED MATTER, cilt.340, ss.430-433, 2003
dc.identifier.issn0921-4526
dc.identifier.otherav_c3b0be92-d1f2-4693-8259-b7c71045bc96
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/129828
dc.identifier.urihttps://doi.org/10.1016/j.physb.2003.09.034
dc.description.abstractWe have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydrogen impurities. A nitrogen-related muon level-crossing resonance is associated with a static center formed by trapping of a mobile Mu impurity at another defect. This trapped Mu is released above 800 K. Muon spin depolarization data imply that both Mu(0) and ground-state Mu(+) centers are mobile. Strong correlations between growth of the trapped Mu resonance and Mu(0) motion and transformation rates above 400 K imply that Mu(0) is the more likely precursor in that region. (C) 2003 Elsevier B.V. All rights reserved.
dc.language.isoeng
dc.subjectTemel Bilimler (SCI)
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectFizik
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectTemel Bilimler
dc.subjectCondensed Matter Physics
dc.subjectElectronic, Optical and Magnetic Materials
dc.subjectPhysical Sciences
dc.titleTrapping of mobile Mu centers in single crystal AlN
dc.typeMakale
dc.relation.journalPHYSICA B-CONDENSED MATTER
dc.contributor.department, ,
dc.identifier.volume340
dc.identifier.startpage430
dc.identifier.endpage433
dc.contributor.firstauthorID170109


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