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dc.contributor.authorBoland-Thoms, A.
dc.contributor.authorErol, Ayşe
dc.contributor.authorBalkan, N.
dc.contributor.authorMazzucato, S.
dc.date.accessioned2021-03-05T16:43:26Z
dc.date.available2021-03-05T16:43:26Z
dc.identifier.citationMazzucato S., Boland-Thoms A., Erol A., Balkan N., "Photoconductivity and In-plane Photovoltage studies in GaInNAs/GaAs quantum wells", PHYSICA SCRIPTA, ss.236-239, 2004
dc.identifier.issn0031-8949
dc.identifier.othervv_1032021
dc.identifier.otherav_c203d40e-1d51-4a7f-b677-2c1565eea9b1
dc.identifier.urihttp://hdl.handle.net/20.500.12627/128758
dc.identifier.urihttps://doi.org/10.1088/0031-8949/2004/t114/060
dc.description.abstractAn investigation of the Photoconductivity (PC) and In-plane Photovoltage (IPV) response of an undoped GaInNAs quantum well (QW) was carried out in the transient and steady-state modes using the 1.064 mu m line of a Nd: YAG laser as the excitation source. In this paper we focus on the behaviour of the nonlinear response of the transient PC (TPC) signal to excitation intensity. All PC measurements were performed at room temperature. Temperature and excitation intensity were considered instead in the study of the IPV signal.
dc.language.isoeng
dc.subjectFİZİK, MULTİDİSİPLİNER
dc.subjectTemel Bilimler
dc.subjectDisiplinlerarası Fizik ve İlgili Bilim ve Teknoloji Alanları
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.titlePhotoconductivity and In-plane Photovoltage studies in GaInNAs/GaAs quantum wells
dc.typeMakale
dc.relation.journalPHYSICA SCRIPTA
dc.contributor.departmentUniversity Of Essex , ,
dc.identifier.startpage236
dc.identifier.endpage239
dc.contributor.firstauthorID170408


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