Characterization of as-grown and annealed modulation doped Ga1-xInxNyAs1-y /GaAs quantum well structures using Infrared spectroscopy and Raman scattering techniques

dc.contributor.author	Akyüz, Sevim
dc.contributor.author	EROL, AYŞE
dc.contributor.author	Guina, Mircea
dc.contributor.author	Arıkan, Çetin M.
dc.contributor.author	AKALIN, ELİF
dc.contributor.author	Puustinnen, Janne
dc.date.accessioned	2021-03-05T10:41:48Z
dc.date.available	2021-03-05T10:41:48Z
dc.identifier.citation	AKALIN E., EROL A., Akyüz S., Arıkan Ç. M. , Puustinnen J., Guina M., "Characterization of as-grown and annealed modulation doped Ga1-xInxNyAs1-y /GaAs quantum well structures using Infrared spectroscopy and Raman scattering techniques", International Conference on Superlattices, Nanostructures, and Nanodevices (ICSNN 2012), Almanya, 1 - 04 Temmuz 2012, ss.348
dc.identifier.other	vv_1032021
dc.identifier.other	av_a4701cbb-1d5c-430d-bc53-8f84b06c11ce
dc.identifier.uri	http://hdl.handle.net/20.500.12627/110010
dc.language.iso	eng
dc.subject	Temel Bilimler
dc.subject	Fizik
dc.subject	Temel Bilimler (SCI)
dc.title	Characterization of as-grown and annealed modulation doped Ga1-xInxNyAs1-y /GaAs quantum well structures using Infrared spectroscopy and Raman scattering techniques
dc.type	Bildiri
dc.contributor.department	, ,
dc.contributor.firstauthorID	664203

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