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dc.contributor.authorkuntman, hakan
dc.contributor.authorardalı, arda
dc.contributor.authorKacar, FIRAT
dc.contributor.authorKuntman, AYTEN
dc.date.accessioned2021-03-05T10:17:22Z
dc.date.available2021-03-05T10:17:22Z
dc.date.issued2004
dc.identifier.citationKuntman A., ardalı a., kuntman h., Kacar F., "A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors", SOLID-STATE ELECTRONICS, cilt.48, ss.217-223, 2004
dc.identifier.issn0038-1101
dc.identifier.otherav_a2574dd9-8c74-478d-91d4-9beb14459c06
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/108737
dc.identifier.urihttps://doi.org/10.1016/j.sse.2003.07.001
dc.description.abstractThe importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.
dc.language.isoeng
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectMÜHENDİSLİK, ELEKTRİK VE ELEKTRONİK
dc.subjectMühendislik
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectFİZİK, UYGULAMALI
dc.subjectFizik
dc.subjectTemel Bilimler (SCI)
dc.subjectFİZİK, YOĞUN MADDE
dc.subjectBilgi Sistemleri, Haberleşme ve Kontrol Mühendisliği
dc.subjectSinyal İşleme
dc.subjectMühendislik ve Teknoloji
dc.subjectTemel Bilimler
dc.titleA Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors
dc.typeMakale
dc.relation.journalSOLID-STATE ELECTRONICS
dc.contributor.department, ,
dc.identifier.volume48
dc.identifier.issue2
dc.identifier.startpage217
dc.identifier.endpage223
dc.contributor.firstauthorID17267


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