| dc.contributor.author | UNGAN, FATİH | |
| dc.contributor.author | Arikan, Mehmet Cetin | |
| dc.contributor.author | Erol, Ayşe | |
| dc.contributor.author | Sokmen, Ismail | |
| dc.contributor.author | SARİ, HÜSEYİN | |
| dc.contributor.author | KASAPOĞLU, ESİN | |
| dc.contributor.author | Sakiroglu, Serpil | |
| dc.contributor.author | Yesilgul, Unal | |
| dc.date.accessioned | 2021-03-02T21:29:20Z | |
| dc.date.available | 2021-03-02T21:29:20Z | |
| dc.identifier.citation | UNGAN F., Yesilgul U., Sakiroglu S., KASAPOĞLU E., Erol A., Arikan M. C. , SARİ H., Sokmen I., "Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well", NANOSCALE RESEARCH LETTERS, cilt.7, 2012 | |
| dc.identifier.issn | 1931-7573 | |
| dc.identifier.other | av_0734ab9c-4d8d-4b46-bd80-15934ca653af | |
| dc.identifier.other | vv_1032021 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12627/10699 | |
| dc.identifier.uri | https://doi.org/10.1186/1556-276x-7-606 | |
| dc.description.abstract | Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization. | |
| dc.language.iso | eng | |
| dc.subject | Yoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler | |
| dc.subject | Yüzeyler ve arayüzeyler; İnce filmler ve nanosistemler | |
| dc.subject | Temel Bilimler | |
| dc.subject | Mühendislik ve Teknoloji | |
| dc.subject | MALZEME BİLİMİ, MULTIDISCIPLINARY | |
| dc.subject | Malzeme Bilimi | |
| dc.subject | Mühendislik, Bilişim ve Teknoloji (ENG) | |
| dc.subject | FİZİK, UYGULAMALI | |
| dc.subject | Temel Bilimler (SCI) | |
| dc.subject | Fizik | |
| dc.subject | NANOBİLİM VE NANOTEKNOLOJİ | |
| dc.title | Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well | |
| dc.type | Makale | |
| dc.relation.journal | NANOSCALE RESEARCH LETTERS | |
| dc.contributor.department | Sivas Cumhuriyet Üniversitesi , Teknoloji Fakültesi , Optik Mühendisliği | |
| dc.identifier.volume | 7 | |
| dc.contributor.firstauthorID | 68904 | |
