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dc.contributor.authorUNGAN, FATİH
dc.contributor.authorArikan, Mehmet Cetin
dc.contributor.authorErol, Ayşe
dc.contributor.authorSokmen, Ismail
dc.contributor.authorSARİ, HÜSEYİN
dc.contributor.authorKASAPOĞLU, ESİN
dc.contributor.authorSakiroglu, Serpil
dc.contributor.authorYesilgul, Unal
dc.date.accessioned2021-03-02T21:29:20Z
dc.date.available2021-03-02T21:29:20Z
dc.identifier.citationUNGAN F., Yesilgul U., Sakiroglu S., KASAPOĞLU E., Erol A., Arikan M. C. , SARİ H., Sokmen I., "Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well", NANOSCALE RESEARCH LETTERS, cilt.7, 2012
dc.identifier.issn1931-7573
dc.identifier.otherav_0734ab9c-4d8d-4b46-bd80-15934ca653af
dc.identifier.othervv_1032021
dc.identifier.urihttp://hdl.handle.net/20.500.12627/10699
dc.identifier.urihttps://doi.org/10.1186/1556-276x-7-606
dc.description.abstractWithin the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
dc.language.isoeng
dc.subjectYoğun Madde 1:Yapısal, Mekanik ve Termal Özellikler
dc.subjectYüzeyler ve arayüzeyler; İnce filmler ve nanosistemler
dc.subjectTemel Bilimler
dc.subjectMühendislik ve Teknoloji
dc.subjectMALZEME BİLİMİ, MULTIDISCIPLINARY
dc.subjectMalzeme Bilimi
dc.subjectMühendislik, Bilişim ve Teknoloji (ENG)
dc.subjectFİZİK, UYGULAMALI
dc.subjectTemel Bilimler (SCI)
dc.subjectFizik
dc.subjectNANOBİLİM VE NANOTEKNOLOJİ
dc.titleEffects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well
dc.typeMakale
dc.relation.journalNANOSCALE RESEARCH LETTERS
dc.contributor.departmentSivas Cumhuriyet Üniversitesi , Teknoloji Fakültesi , Optik Mühendisliği
dc.identifier.volume7
dc.contributor.firstauthorID68904


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