Motion of muonium (hydrogen) in the III-V nitrides

Abstract

Muon spin relaxation measurements in the III-V nitrides have provided data on the motion of each of the three charge-states of the muonium 'isotope' of hydrogen. Motional parameters are established for Mu(+) in InN, Mu(0) in AlN, and Mu(-) in GaN, with qualitative results in the other materials. Both Mu(+) and Mu(0) show tunneling below 300 K and thermal diffusion at higher temperatures leading to interactions with other impurities or extended defects.