Dielectric Properties of Au/SrTiO3/p-Si Structure Obtained by RF Magnetron Sputtering in a Wide Frequency Range

Abstract

Dielectric properties of Au/p-Si structure with Strontium titanate (SrTiO3) interlayer were examined in the frequency range of 100-900 kHz (by step 100 kHz). SrTiO3 thin film was deposited on p-type Si substrate using radio frequency (RF) magnetron sputtering method at a substrate temperature of 500 degrees C. Dielectric parameters such as dielectric constant (epsilon(')), dielectric loss (epsilon('')), real modulus (M-'), imaginary modulus (M-''), and electrical conductivity (sigma(ac)) of the Au/SrTiO3/p-Si structure were calculated by evaluating the results obtained from admittance spectroscopy in the frequency range of 100-900 kHz by step 100 kHz. According to the obtained results, epsilon(') values take negative values as a result of depending on frequency measurements.