Photo-induced transient spectroscopy of defect levels in GaInNAs

Abstract

The photo-induced transient spectroscopy (PITS) technique was used to investigate the capture and emission dynamics of deep levels in Ga0.8In0.2N0.015As0.985/GaAs and Ga0.8In0.2As/GaAs quantum wells, sequentially grown by molecular beam epitaxy. A broadband white light or a filtered light was used to identify and discriminate the trapping centres present in the sample. Among all the features discovered in this experiment two PITS peaks, showing activation energies of 160 and 330 meV, have been associated with deep levels in GaInNAs.